(15A04301) ELECTRONIC DEVICES AND CIRCUITS
Course Objectives:
To give understanding on semiconductor physics of the intrinsic, p and n materials, characteristics of the p-n junction diode, diode’s application in electronic circuits, Characteristics of BJT,FET,MOSFET, characteristics of special purpose electronic devices. To familiarize students with dc biasing circuits of BJT, FET and analyzing basic transistor amplifier circuits.
Course Outcomes:
Upon completion of the course, students will:
Analyze the operating principles of major electronic devices, its characteristics and applications.
Design and analyze the DC bias circuitry of BJT and FET.
Design and analyze basic transistor amplifier circuits using BJT and FET.
UNIT-I
Junction Diode Characteristics : Open circuited p-njunction, Biased p-n junction,p-n junction diode, current components in PN junction Diode, diode equation,V-I Characteristics, temperature dependence on V-I characteristics, Diode resistance, Diode capacitance, energy band diagram of PN junction Diode.
Special Semiconductor Diodes: Zener Diode, Breakdown mechanisms, Zener diode applications, LED, LCD, Photo diode, Varactor diode, Tunnel Diode, DIAC, TRIAC, SCR, UJT. Construction, operation and characteristics of all the diodes is required to be considered.
UNIT- II
Rectifiers and Filters: Basic Rectifier setup, half wave rectifier, full wave rectifier, bridge rectifier, derivations of characteristics of rectifiers, rectifier circuits-operation, input and output waveforms,Filters, Inductor filter, Capacitor filter, L- section filter, P- section filter, Multiple L- section and Multiple P section filter ,comparison of various filter circuits in terms of ripple factors.
UNIT- III
Transistor Characteristics:
BJT:Junction transistor, transistor current components, transistor equation, transistor configurations, transistor as an amplifier, characteristics of transistor in Common Base, Common Emitter and Common Collectorconfigurations, Ebers-Moll model of a transistor,punch through/ reach through, Photo transistor, typical transistor junction voltage values.
FET:FETtypes, construction, operation, characteristics, parameters, MOSFET-types, construction, operation, characteristics, comparison between JFET and MOSFET.
UNIT- IV
Transistor Biasing and Thermal Stabilization : Need for biasing,operating point, load line analysis, BJT biasing- methods,basic stability, fixed bias, collector to base bias, self bias, Stabilization against variations in VBE, Ic, and β, Stability factors, (S, S', S'’), Bias compensation, Thermal runaway, Thermal stability.
FET Biasing- methods and stabilization.
UNIT- V
Small Signal Low Frequency Transistor Amplifier Models:
BJT: Two port network, Transistor hybrid model, determination of h-parameters,conversion of h-parameters,generalized analysis of transistor amplifier model using h-parameters, Analysis of CB, CE and CC amplifiers using exact and approximate analysis, Comparison of transistor amplifiers.
FET: Generalized analysis of small signal model, Analysis of CG, CS and CD amplifiers, comparison of FET amplifiers.
Study Material's For Electronic Devices & Circuits
2 Mark's for 5 units part-1: Download
2 Mark's for 5 units part-2: Download
Lecture Notes for 5 Units(According to JNTUA,R15): Download
Text Book- Electronic Devices & Circuit Theory: Download
Unit Wise PDF'S
Unit-I:
Photodiode: Download
PN Junction diode & it's Characteristics: Download
Special Semiconductor Devices: Download
Varactor diode & Tunnel Diode: Download
Zener Diode: Download
Unit-II:
Rectifiers and Filters: Download
Unit-III:
Transistors: Download
BJT: Download
FET: Download
Unit-IV:
Transistor Biasing and Thermal Stabilization: Download
Unit-V:
Small Signal LOW frequency(PPT): Download
Small Signal LOW frequency(PDF): Download
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